长江存储宣布 128 层 QLC 3D NAND 闪存芯片研发成功

网易科技讯 4 月 13 日消息，长江存储今日在官网宣布其 128 层 QLC 3D NAND 闪存芯片 X2-6070 研发成功，并已在多家控制器厂商 SSD 等终端存储产品上通过验证。

长江存储表示，X2-6070 是业内首款 128 层 QLC 规格的 3D NAND 闪存，拥有业内已知型号产品中最高单位面积存储密度，最高 I/O 传输速度和最高单颗 NAND 闪存芯片容量。此次同时发布的还有 128 层 512Gb TLC（3 bit/cell）规格闪存芯片 X2-9060，以满足不同应用场景的需求。

据了解，每颗 X2-6070 QLC 闪存芯片共提供 1.33Tb 的存储容量。而在 I/O 读写性能方面，X2-6070 及 X2-9060 均可在 1.2V Vccq 电压下实现 1.6Gbps（Gigabits/s 千兆位 / 秒）的数据传输速率。

长江存储表示，公司用短短 3 年时间实现了从 32 层到 64 层再到 128 层的跨越。
Netease science and technology news on April 13, Changjiang storage today announced on its official website that its 128 layer QLC 3D NAND flash chip x2-6070 has been successfully developed, and has passed the verification on terminal storage products such as SSDs of many controller manufacturers.
Changjiang storage said that x2-6070 is the first 128 layer QLC 3D NAND flash memory in the industry, with the highest storage density per unit area, the highest I / O transmission speed and the highest single NAND flash memory chip capacity among known products in the industry. At the same time, the 128 layer 512gb TLC (3 bit / cell) flash chip x2-9060 was released to meet the needs of different application scenarios.
It is understood that each x2-6070 QLC flash chip provides a total storage capacity of 1.33tb. In terms of I / O reading and writing performance, both x2-6070 and x2-9060 can achieve 1.6gbps (gigabits / s) data transmission rate at 1.2V VCCQ.
According to Changjiang storage, the company has achieved a leap from 32-tier to 64 tier and 128 tier in just three years.